A 60GHz power amplifier with 12.1 dBm & P1dBCP in 0.18um SiGe BiCMOS process

Abstract

This paper describes the design and analysis of a four-stages 60GHz SiGe BiCMOS power amplifier. The proposed circuit uses single-ended common-emitter topology that draws 72mW from 1.8V supply. It is able to deliver 12.1dBm output, 17.4dB power gain with a peak 14.1% PAE at its compression point. The S21 has a 3dB bandwidth from 55GHz to 67GHz, which covers the whole of 60GHz band. The power amplifier occupy a silicon area of 1.1 × 0.46 um2 and the measured results show that it can be fully adopted in the 60GHz ISM band applications.