Investigation of As2S3-Al films for dot-matrix holographic recording

Abstract

We have performed the investigation of dot matrix holographic recording in amorphous As2S3 chalcogenide films with different thickness on Al coated glass substrates. The control over the interference minimum of reflection during the evaporation process allowed obtaining As2S3-Al system with a minimum value of initial reflection in defined spectral region. The investigation of dependence of diffraction efficiency of holographic recording on both film thickness and initial conditions of reflectivity in the system was performed. The main advantage of this type of system is the possibility to increase optical sensitivity of material in predefined spectrum region for phase hologram recording.