Bipolar resistive switching in PbO nanoscale thin films

Abstract

This article discusses the issues relating to the switching and memory processes in thin films structures based on Me-MeOx-Me systems, also referred to as memristor. The memristor creation allows associative computing architecture hardware realized by synapse from nano-materials copying and the neuromorphic microchips and computing devices. As a result, programmable computers history completion and the intelligent associative machines creation is possible. This paper presents the results of electron transport temperature investigations, the influence of size effects and oxide phase composition on the switching and memory processes. Based on all result analysis, we proposed the electron transport, switching and memory mechanisms in Pt-PbOx-Pt structures.