Fine gate TFT circuits fabricated with a new printing technology

Abstract

Fine-gate polysilicon thin-film transistors (TFTs) and TFT circuits for large-area electronics have been successfully fabricated with a new printing technology. Electric characteristics for an experimental 3- mu m-gate n-channel TFT are comparable to those for conventional TFTs. A 5- mu m design-rule NMOS shift register and 8*8 liquid crystal display (LCD) operations have also been achieved. The printing technology can delineate patterns fine enough to produce large-area high-resolution TFT-LCDs without using an optical mask aligner.<>