Comprehensive Comparison of Fabricated 1.6-kV Punch-Through Design Ni/n-SiC Schottky Barrier Diode with Ar+ Implant Edge Termination and Heterojunction p-NiO/n-SiC Diode

Abstract

A comprehensive comparison of a punch-through Ni/SiC Schottky diode with Ar+ implant edge termination and heterojunction NiO/SiC diode were conducted through fabrication, electrical evaluation, TCAD simulation analysis and reverse recovery evaluation. Both fabricated diodes exhibit high breakdown voltage of 1595V, utilizing a punch-through design. The heterojunction NiO/SiC diode has shown ×0.5 less reverse leakage current than the Ni/SiC Schottky diode due to higher barrier height. The Ni/SiC Schottky diode, on the other hand, has shown 90% less reverse recovery time, indicating a small degree of minority carrier injection for the heterojunction NiO/SiC diode.