{"title":"Modeling Considerations for UV Diode Lasers Based on GaN","authors":"P. Eliseev, M. Osiński","doi":"10.1364/slada.1995.pdp.1","DOIUrl":null,"url":null,"abstract":"The material parameters of GaN active medium are reviewed and specified for the numerical modeling of both edge- and surface-emitting laser devices. Calculations are presented for the oscillation strength, recombination coefficients, quantum yield and modal gain in GaN/GaAlN heterostructure. Threshold currents below 10 kA/cm2 at room temperature are predicted in optimized diode structures.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Lasers Advanced Devices and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/slada.1995.pdp.1","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The material parameters of GaN active medium are reviewed and specified for the numerical modeling of both edge- and surface-emitting laser devices. Calculations are presented for the oscillation strength, recombination coefficients, quantum yield and modal gain in GaN/GaAlN heterostructure. Threshold currents below 10 kA/cm2 at room temperature are predicted in optimized diode structures.