Model-Based Analysis of Single-Event Upset (SEU) Vulnerability of 6T SRAM Using FinFET Technologies

Abstract

The modeling process, when validated with the experimental data, can be used for additional analysis of similar technologies without the expense of laser beam or heavy ion testing. This paper evaluates the vulnerability of SRAM cells to single-event upsets (SEUs) using the NCSU FreePDK 15-nm and the ASAP 7-nm Predictive PDK models. Due to scaling, SRAM cells designed and fabricated in advanced technologies have reduced critical node capacitances that make them more vulnerable to the sources of radiation because of the corresponding critical charge of the cell. The maximum threshold linear energy transfer (LET) without an upset in the 15-nm technology is approximately 6.3 times the maximum of the 7-nm technology. In addition, reducing the critical charge affects the soft error rate (SER). The estimated results were compared with previously published experimental data for validation.