An Ultra-Low-Supply Output-Capacitorless LDO with Signal- and Transient-Enhancement

Yajun Lin, Haozheng Wan, Jianxin Yang, K. Leung
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引用次数: 0

Abstract

An ultra-low-supply output-capacitorless (OCL) low-dropout regulator is presented in this paper. The circuit is based on flipped-voltage-follower-based (FVF-based) LDO with a signal-current enhancer (SCE) and a direct voltage-spike detection part. To enable the LDO to function properly under an ultra-low supply voltage, an additional charge-pump circuit provides a higher supply to the control part of LDO to enlarge the control swing of power transistor. The proposed LDO regulator is designed in UMC 65-nm CMOS process. The threshold voltages of NMOSFET and PMOSFET are 0.374 V and −0.311 V, respectively. The achieved minimum supply voltage is 0.6 V, with output voltage of 0.5 V. The load current ranges between 100 μA and 50 mA. The figure-of-merit of proposed circuit is 0.43 ps.
具有信号和瞬态增强的超低电源输出无电容LDO
提出了一种超低电源输出无电容(OCL)低差稳压器。该电路基于基于翻转电压跟随器(fvf)的LDO,带有信号电流增强器(SCE)和直接电压尖峰检测部分。为了使LDO在超低电源电压下正常工作,在LDO的控制部分增加了一个电荷泵电路,以增大功率晶体管的控制摆幅。LDO稳压器采用联华电子65nm CMOS工艺设计。NMOSFET和PMOSFET的阈值电压分别为0.374 V和- 0.311 V。实现的最小电源电压为0.6 V,输出电压为0.5 V。负载电流范围为100 μA ~ 50 mA。该电路的优值为0.43 ps。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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