{"title":"An Ultra-Low-Supply Output-Capacitorless LDO with Signal- and Transient-Enhancement","authors":"Yajun Lin, Haozheng Wan, Jianxin Yang, K. Leung","doi":"10.1109/APCCAS55924.2022.10090352","DOIUrl":null,"url":null,"abstract":"An ultra-low-supply output-capacitorless (OCL) low-dropout regulator is presented in this paper. The circuit is based on flipped-voltage-follower-based (FVF-based) LDO with a signal-current enhancer (SCE) and a direct voltage-spike detection part. To enable the LDO to function properly under an ultra-low supply voltage, an additional charge-pump circuit provides a higher supply to the control part of LDO to enlarge the control swing of power transistor. The proposed LDO regulator is designed in UMC 65-nm CMOS process. The threshold voltages of NMOSFET and PMOSFET are 0.374 V and −0.311 V, respectively. The achieved minimum supply voltage is 0.6 V, with output voltage of 0.5 V. The load current ranges between 100 μA and 50 mA. The figure-of-merit of proposed circuit is 0.43 ps.","PeriodicalId":243739,"journal":{"name":"2022 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","volume":"54 15","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APCCAS55924.2022.10090352","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
An ultra-low-supply output-capacitorless (OCL) low-dropout regulator is presented in this paper. The circuit is based on flipped-voltage-follower-based (FVF-based) LDO with a signal-current enhancer (SCE) and a direct voltage-spike detection part. To enable the LDO to function properly under an ultra-low supply voltage, an additional charge-pump circuit provides a higher supply to the control part of LDO to enlarge the control swing of power transistor. The proposed LDO regulator is designed in UMC 65-nm CMOS process. The threshold voltages of NMOSFET and PMOSFET are 0.374 V and −0.311 V, respectively. The achieved minimum supply voltage is 0.6 V, with output voltage of 0.5 V. The load current ranges between 100 μA and 50 mA. The figure-of-merit of proposed circuit is 0.43 ps.