Signal to Noise Ratio of silicon photomultipliers measured in the continuous wave regime

Abstract

We performed a Signal to Noise Ratio characterization, in the continuous wave regime, at different bias voltages, frequencies and temperatures, on a novel class of silicon photomultipliers fabricated in planar technology on silicon p-type substrate. Signal to Noise Ratio has been measured as the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the Root Mean Square deviation of the overall current flowing to the device. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current. We have also performed a comparison between our SiPMs and a photomultiplier tube in terms of Signal to Noise Ratio, as a function of the temperature of the SiPM package and at different bias voltages. Furthermore, Excess Noise Factor measurements of the SiPM, as a function of the applied bias, are shown and discussed. Our results show the outstanding performance of this novel class of SiPMs even without the need of any cooling system.