A BV/sub CEO/ engineering in horizontal current bipolar transistor (HCBT) technology

MELECON 2006 - 2006 IEEE Mediterranean Electrotechnical Conference Pub Date : 2006-05-16 DOI:10.1109/MELCON.2006.1653055

T. Suligoj, M. Koričić, P. Biljanovic

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Abstract

A need for different breakdown voltages of vertical-current bipolar transistors on the same chip is accomplished by added process complexity and increased fabrication costs. In horizontal current bipolar transistor (HCBT) technology, the devices with different collector-emitter breakdown voltages (BVCEO) can be fabricated just by changing the mask dimensions, without any addition to process flow. Extrinsic base has a main effect on BVCEO due to charge sharing effect. Cutoff frequency and maximum frequency of oscillations of HCBT structures with different extrinsic base widths are measured together with BVCEO. The optimum fTBVCEO product of more than 100 GHzV is achieved at extrinsic base width of 0.8 mum. The charge sharing effect is analyzed by 2D simulations and the reduction of the peak electric field in the intrinsic region is shown. Moreover, the increase of BVCEO at low base currents is measured and explained by the current gain reduction due to SHR recombination in emitter-base depletion region. The breakdown occurs in different regions of HCBT structure at low and high currents

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水平电流双极晶体管(HCBT)技术的BV/sub CEO/工程

在同一芯片上，垂直电流双极晶体管需要不同的击穿电压，这是通过增加工艺复杂性和增加制造成本来实现的。在水平电流双极晶体管(HCBT)技术中，只需改变掩模尺寸就可以制造具有不同集电极-发射极击穿电压(BVCEO)的器件，而无需增加工艺流程。由于电荷共享效应，外部碱对BVCEO起主要作用。测量了不同外源基宽HCBT结构的截止频率和最大振荡频率。在外部基宽为0.8 μ m时，可获得100 ghz以上的最佳fTBVCEO产品。通过二维模拟分析了电荷共享效应，表明了本征区峰值电场的减小。此外，在低基极电流下，BVCEO的增加可以用发射极-基极耗尽区SHR复合导致的电流增益降低来解释。在低电流和高电流下，击穿发生在HCBT结构的不同区域

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MELECON 2006 - 2006 IEEE Mediterranean Electrotechnical Conference

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