Dynamic trapping model for analysis of GaAs MESFETs and quantum well lasers

Abstract

A numerically efficient, dynamic trapping model has been developed for semiconductor device simulation. All analysis modes-dc, ac, and time transient-are available for full account of the trap effects on the device characteristics. The application of this model to the simulation of GaAs MESFETs reveals several important mechanisms responsible for the sidegating effect which deteriorates the circuit performance of MESFETs. A quantitative agreement between the simulation and experiment results is achieved. With equivalent trapping parameters (e.g. capture and emission cross sections) calculated from the quantum mechanical analysis, the model can be extended to describe the carrier transition among discrete eigen-energy levels in and transport across the quantum well region in quantum well lasers. An example of the quantum well laser analysis is given.