An improved analytical model of GaN HEMT in cascode configuration during turn-on transition

Abstract

In this paper, an improved analytical model suitable for a high voltage Gallium Nitride high electron mobility transistor (GaN HEMT) in cascode configuration is presented to analyze operating condition and calculate the energy losses during turn-on transition. Aiming to guarantee the superior precision of the model, all the parasitic inductors and capacitors are taken into consideration during the turn-on transition. The turn-on process is divided into five stages. By means of precise circuit equality and analysis, the frequency domain and time domain expressions of voltage and current in different working stages are illustrated in detail. Moreover, the energy losses could be further calculated accordingly. The accuracy of the proposed model is validated by experimental results whatever current and gate resistor change.