Architectural consequences of radiation performance in a flash NAND device

Abstract

Single-event effects and total ionizing-dose testing was performed on a flash NAND device. The results are presented here and the consequences for error correction architectures are analyzed taking into account the fact that beginning-of-life flash devices are susceptible to data corruption with no external stress applied. The analysis indicates that many typical error correction architectures may be ineffectual because of the variety of radiation effects.