A 2V BiCMOS receiver chip for L-S-C band personal networks

Abstract

This paper concerns with the design and performance results of a receiver chip developed for personal networks applications utilizing a BiCMOS technology. The receiver, which integrates a bipolar RF amplifier, a BiCMOS simplified Gilbert mixer, and an NMOS IF amplifier, on a single chip, is designed to operate at 2 V over 1.8-5.4 GHz frequency band with a total power dissipation of 18 mW. Maximum conversion gain, LO-IF and RF-IF isolation are, respectively, 34 dB, 40 dB, and 32 dB.