A novel technique for noise-tolerance in dynamic circuits

S. Goel, T. Darwish, M. Bayoumi
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引用次数: 9

Abstract

Noise issues in deep submicron CMOS VLSI circuits have an importance comparable to area, delay and power consumption issues due to aggressive scaling trends in devices and interconnections. An attempt has been made to address this problem in this paper. A new technique to make dynamic CMOS circuits noise tolerant has been proposed by the authors. Simulation results for a dynamic-CMOS NAND gate and a dynamic-CMOS 1-bit full-adder circuit show that the proposed technique has an improvement in ANTE of 6.0X over conventional dynamic logic. The proposed technique, in comparison with the twin transistor technique, proves to improve ANTE by 2.8X. There is a large power dissipation incurred during the evaluation period for certain input combinations.
一种新的动态电路容噪技术
深亚微米CMOS VLSI电路中的噪声问题与由于器件和互连的积极缩放趋势而导致的面积、延迟和功耗问题相当重要。本文试图解决这一问题。提出了一种使动态CMOS电路耐噪的新技术。对一个动态cmos NAND门和一个动态cmos 1位全加法器电路的仿真结果表明,与传统的动态逻辑相比,该技术的ANTE提高了6.0倍。与双晶体管技术相比,该技术将ANTE提高了2.8倍。对于某些输入组合,在评估期间会产生较大的功耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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