2.5 kV 100 A /spl mu/-stack IGBT

Abstract

A 2.5 kV 100 A /spl mu/(micro)-stack IGBT has been developed. This is the first work to demonstrate the possibility of a high voltage, high current and high reliable flat-packaged MOS controlled device. The 20 mm square chip is press-contacted with an emitter electrode having four rectangular p-base regions on which the MOS gate is not arranged. The great advantage of this structure is the double side cooling and the bondingless emitter wire. The /spl mu/-stack IGBT shows the high blocking voltage of 2.5 kV, the typical saturation voltage of 3.5 V at the collector current Ic=100 A, the turn-off capability of 3/spl times/Ic, and the good pressure contact for the electrical and thermal characteristics in the range from 100 to 800 kg/chip.