{"title":"A terahertz Fabry-Pérot modulator using charge injection-induced insulator-metal transition in vanadium dioxide","authors":"O. Fawole, M. Tabib-Azar","doi":"10.1109/IEEE-IWS.2016.7585435","DOIUrl":null,"url":null,"abstract":"We report the use of Insulator-Metal Transition (IMT) of vanadium dioxide (VO<sub>2</sub>) to modulate Fabry-Pérot resonances in a terahertz Fabry-Pérot resonator. Our two-plate Fabry-Pérot modulator consists of one partially reflecting plate of monolayer graphene on a polymer substrate, and another plate of VO<sub>2</sub>-integrated copper electrodes. VO<sub>2</sub>, a strongly correlated electron system, undergoes IMT upon application of external stimuli. In our Fabry-Pérot modulator device, we stimulated VO<sub>2</sub> IMT by injecting charges into the VO<sub>2</sub> via copper electrodes to realize a terahertz modulator. With 500mA DC at 12 V, we obtained 50% amplitude modulation depth at 0.884 THz.","PeriodicalId":185971,"journal":{"name":"2016 IEEE MTT-S International Wireless Symposium (IWS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEE-IWS.2016.7585435","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We report the use of Insulator-Metal Transition (IMT) of vanadium dioxide (VO2) to modulate Fabry-Pérot resonances in a terahertz Fabry-Pérot resonator. Our two-plate Fabry-Pérot modulator consists of one partially reflecting plate of monolayer graphene on a polymer substrate, and another plate of VO2-integrated copper electrodes. VO2, a strongly correlated electron system, undergoes IMT upon application of external stimuli. In our Fabry-Pérot modulator device, we stimulated VO2 IMT by injecting charges into the VO2 via copper electrodes to realize a terahertz modulator. With 500mA DC at 12 V, we obtained 50% amplitude modulation depth at 0.884 THz.