Investigation of optimized Si1-xGex 3D-fin-TFET by varying the fin height

Abstract

TFETs are the competitive structures in replacement of MOSFET. Our designed structure is based on material variation with the use of SiGe compound for 3D fin-TFET construction by varying the fin-height. In this work, DC and RF characterization of the device is also reported. The characteristics have been analysed with the variation in fin-height and material variation at different regions of the structure. The drive current (ID) of ~4×10-6 A with low leakage current of 0.1×10-15A and least subthreshold swing of 18.23mV/decade have reported. Other DC characteristics such as transconductance, output impedance and RF metrics such as unity gain cutoff frequency, maximum oscillation frequencies have been reported with maximum ft of 65 GHz and fmax of 200 GHz. An optimized gate height of H = 10nm (AR = 1) is finalized for observing better performance metrics for the proposed device structure.