Laser power density effect on the properties of Sb2S3 thin films prepared by pulsed laser assisted chemical bath deposition

Nabile Edith Rodríguez-García, F. A. Vázquez-Gálvez, Fernando Estrada-Saldaña, Israel Hernández-Hernández
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Abstract

Antimony Sulfide (Sb2S3) thin films were prepared using the laser assisted chemical bath deposition technique. The precursors used in the chemical bath were antimony chloride and sodium thiosulfate, the deposit was made at room temperature on glass substrate, while it was irradiated with a wavelength of 532 nm of the pulsed Nd:YAG laser. In this work, we studied the effects of energy density (1.97 x 107 and 7.07 x 106 W/cm2) and the irradiation time (30, 45 and 60 min) during the deposition process on the structure and the optical and electrical properties of the antimony sulfide films. The structure, composition, and optical and electrical properties were analyzed by X-Ray Diffraction (XRD), Raman Spectroscopy and X-Ray Emitted Photoelectron Spectroscopy (XPS), UV-Vis spectroscopy and photoconductivity. The results showed that the laser assisted chemical deposition technique is an effective synthesis technique for obtaining thin films of antimony sulfide for optoelectronic applications or in solar cells.
激光功率密度对脉冲激光辅助化学浴沉积Sb2S3薄膜性能的影响
采用激光辅助化学浴沉积技术制备了硫化锑(Sb2S3)薄膜。化学镀液采用氯化锑和硫代硫酸钠为前驱体,在室温下在玻璃衬底上制备沉积,用波长为532 nm的脉冲Nd:YAG激光照射沉积。本文研究了沉积过程中能量密度(1.97 x 107和7.07 x 106 W/cm2)和辐照时间(30、45和60 min)对硫化锑薄膜结构和光电性能的影响。采用x射线衍射(XRD)、拉曼光谱(Raman Spectroscopy)、x射线发射光电子能谱(XPS)、紫外可见光谱(UV-Vis Spectroscopy)和光电导率(photoconductivity)等分析了材料的结构、组成、光学和电性能。结果表明,激光辅助化学沉积技术是一种有效的合成硫化锑薄膜的技术,可用于光电子或太阳能电池。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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