Reduction of surface roughness induced spin relaxation in SOI MOSFETs

Abstract

Silicon is the main element of modern charge-based electronics. Understanding the details of the spin propagation in silicon structures is elementary for novel spin-based device applications. We investigate valley splitting, surface roughness scattering, and spin relaxation matrix elements in thin silicon films by using a perturbative k·p approach. We demonstrated that applying uniaxial stress along the [110] direction considerably suppresses the intersubband spin relaxation elements.