Electrical Properties of p-Type Al - N Codoped ZnO Thin Films

Abstract

Aluminium doped zinc thin films were deposited on silicon substrates using direct current (DC) magnetron sputtering in argon atmosphere. These films were then annealed in nitrogen-oxygen mixed gases for 1 hour at temperature range of 200degC to 500degC. P-type conduction of Al - N codoped ZnO thin films were obtained for all temperatures with a high hole concentration of 1.85 times 1022 cm-3.