4H-SiC PIN Recessed Window Avalanche Photodiode

LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings Pub Date : 2007-11-12 DOI:10.1109/LEOS.2007.4382507

Han-din Liu, D. Mcintosh, Xiaogang Bai, H. Pan, Mingguo Liu, J. Campbell

引用次数: 2

Abstract

We report 4H-SiC p-i-n recessed window avalanche photodiodes with low dark current and high quantum efficiency. For a circular device of 250 mum diameter, the device demonstrated a responsivity of ~135.5 mW/A (external quantum efficiency = ~64%), a dark current ~90 pA (~0.183 mum/cm2) at a photocurrent gain of 1000, and an excess noise factor k of slightly less than 0.1.

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4H-SiC PIN嵌入窗口雪崩光电二极管

我们报道了具有低暗电流和高量子效率的4H-SiC p-i-n嵌入式窗口雪崩光电二极管。对于直径为250 μ m的圆形器件，该器件的响应率为~135.5 mW/ a(外量子效率= ~64%)，在光电流增益为1000的情况下，暗电流为~90 pA (~0.183 μ m/cm2)，多余噪声因子k略小于0.1。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings

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