A 28nm 10Mb Embedded Flash Memory for IoT Product with Ultra-Low Power Near-1V Supply Voltage and High Temperature for Grade 1 Operation

2020 IEEE Symposium on VLSI Circuits Pub Date : 2020-06-01 DOI:10.1109/vlsicircuits18222.2020.9162813

H. Shin, Jisung Kim, Shin-Jae Kang, Sung-Ung Kwak

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引用次数: 2

Abstract

In this paper, we present an Embedded Flash Memory (eFlash) based on logic-28nm process for Internet of Things (IoT) product. IoT product requires high performance, low power operation and immune to the high temperature. Based on a power-efficient 28nm process technology, we implemented the ultra-deep sleep mode (<1uA). Through the WL Boosting and Adaptive Control Sensing Scheme (WBACS), we achieved fast read speed (3.2Gbit/s) and robust sensing margin. High voltages can be generated stably in ultra-low power IO 1.1V by using Double-Boost-Clock (DBC). Through the technique that positive/negative Bi-Directional Charge Pump (BDCP), three high voltages required for Program/Erase operation can be generated from two charge pumps. As a result, we have developed an area competitive eFlash IP (Size 1.27 mm2). Based on these technologies, it was confirmed that 28nm-eFlash operates at ultra-low power (Core-VDD 0.85V & IO 1.1V) and high temperature (Tj 150°C) successfully. And these technologies were mounted in the world's first 28nm process MCU-Connectivity One Chip Solution.

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一款适用于物联网产品的28nm 10Mb嵌入式闪存，超低功耗，近1v供电电压，1级工作高温

在本文中，我们提出了一种基于逻辑-28nm工艺的嵌入式闪存(eFlash)，用于物联网(IoT)产品。物联网产品要求高性能、低功耗、不受高温影响。基于低功耗的28nm工艺技术，我们实现了超深度睡眠模式(<1uA)。通过WL增强和自适应控制感知方案(WBACS)，我们实现了快速的读取速度(3.2Gbit/s)和稳健的感知余量。利用双升压时钟(Double-Boost-Clock, DBC)，可以在超低功耗IO 1.1V下稳定产生高电压。通过正/负双向电荷泵(BDCP)技术，可以由两个电荷泵产生程序/擦除操作所需的三个高压。因此，我们开发了一个具有区域竞争力的eFlash IP(尺寸1.27 mm2)。基于这些技术，28nm-eFlash成功地工作在超低功耗(Core-VDD 0.85V和IO 1.1V)和高温(Tj 150°C)下。这些技术被安装在世界上第一个28纳米制程MCU-Connectivity One Chip Solution中。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2020 IEEE Symposium on VLSI Circuits

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