ALD-Al2O3 as an Inter-Poly Dielectric for a Product Demonstrator in a Proven eFlash Technology

Abstract

We present aluminum oxide (AI 2 O 3 ) as high-k Inter-Poly Dielectric (IPD) in a proven 0.13 mum based embedded Flash (eFlash) technology. Full functionality has been demonstrated from a 400Kbyte product demonstrator for the first time published so far. The AI 2 O 3 layer was formed through Atomic-Layer Deposition (ALD) and the influence of parameters such as precursor, deposition temperature, feed-time and Si content on the product functionality have been determined systematically. Vigorous industrial reliability assessment was conducted throughout and promising retention and endurance have been shown. The results demonstrate AI 2 O 3 IPD readiness for eFlash products without additional integration issues or yield degradation.