Modeling of Be diffusion in InGaAs epitaxial layers using two approaches: Boltzmann-Matano technique and point defect nonequilibrium

Abstract

Be diffusion during post-growth annealing has been studied in InGaAs epitaxial layers. To explain the observed concentration profiles, two models have been proposed. A good agreement has been obtained between experimental and calculated data. The point defect concentration in epitaxial layers during diffusion in InGaAs is also discussed.