{"title":"High frequency pulse generation using a gain-switched commercial semiconductor laser with strong external injection","authors":"P. Anandarajah, A. Kaszubowska, L. Barry","doi":"10.1109/HFPSC.2000.874094","DOIUrl":null,"url":null,"abstract":"We experimentally demonstrate how strong external-injection into a commercial semiconductor diode increases the laser bandwidth such that gain-switched pulses can be generated at frequencies up to 20 GHz (which is far in excess of the lasers inherent bandwidth). The optical pulses generated have pulse widths around 15 ps, and spectral widths of 35 GHz, giving a time-bandwidth product of 0.52, which is close to the transform limit for Gaussian pulses.","PeriodicalId":185234,"journal":{"name":"2000 High Frequency Postgraduate Student Colloquium (Cat. No.00TH8539)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 High Frequency Postgraduate Student Colloquium (Cat. No.00TH8539)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HFPSC.2000.874094","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We experimentally demonstrate how strong external-injection into a commercial semiconductor diode increases the laser bandwidth such that gain-switched pulses can be generated at frequencies up to 20 GHz (which is far in excess of the lasers inherent bandwidth). The optical pulses generated have pulse widths around 15 ps, and spectral widths of 35 GHz, giving a time-bandwidth product of 0.52, which is close to the transform limit for Gaussian pulses.