Characterization of semi-insulating InP: Cu

Abstract

Systematic characterization of InP diffused with Cu have shown that both initially p-type and n-type InP become semi-insulating after Cu diffusion. It is also observed that thermally stable In-Cu rich precipitates form, that the concentration of deep levels is negligible and that InP:Cu samples exhibit inhomogeneities and anomalous transport behavior. These observations support the supposition that the observed semi-insulating behavior in InP:Cu can be best explained by the buried Schottky barrier model, instead of the commonly observed compensation by deep levels.