3-D Stacked NAND Flash String with Tube Channel Structure Using Si and SiGe Selective Etch Process

Abstract

A new vertical NAND flash string with tube channel structure and top source contact has been proposed. The DC and program/erase characteristics of the proposed transistor is investigated using a 3-D TCAD simulation tool. This work is expected to show better P/E, retention, and reliability characteristics than Toshiba's structure.