Design optimization of GaN-based VCSELs

Abstract

We analyze recently manufactured designs of electrically pumped GaN-based vertical-cavity surface-emitting lasers (VCSELs) using advanced laser simulation software. Thick quantum wells are found to allow for the almost complete elimination of the built-in quantum well polarization field. The simulations also reveal several performance limiting effects, e.g., current crowding and electron leakage. Design optimization options are proposed and discussed.