A low operating voltage IGZO TFT using LaLuO3 gate dielectric

Abstract

This study proposes a low operation voltage indium-gallium-zinc oxide (IGZO) thin-film transistor using a high-κ lanthanum-lutetium oxide as the gate dielectric. It is the first time to integrate the high-κ LaLuO₃ into an IGZO TFT. The resulting LaLuO₃/IGZO TFT shows a low threshold voltage of 0.32 V, a small sub-threshold swing of 310 mV/decade and an acceptable mobility (μ_FE) of 6.6 cm²/V-s. The low V_T and small SS allow device operation voltage below 2.5 V.