Microwave performance of InGaAs/InP composite collector bipolar transistors

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1992-10-07 DOI:10.1109/BIPOL.1992.274090

A. Feygenson, R. Hamm, P.R. Smith, R. Montgomery, D. Ritter, R.D. Yadvish, H. Temkin

引用次数: 3

Abstract

A composite collector heterostructure InGaAs/InP bipolar transistor (CCHBT) is described. The collector design assures both the high breakdown voltage, BV/sub CEO/, and the high speed needed for practical IC applications. The microwave performance of the CCHBT is presented. The authors have fabricated and tested monolithic transimpedance amplifiers based on these composite collector transistors. A bandwidth of 28 GHz and a gain of 40 dB Omega were obtained.<>

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InGaAs/InP复合集电极双极晶体管的微波性能

介绍了一种复合集电极异质结构InGaAs/InP双极晶体管(CCHBT)。集电极设计既保证了高击穿电压，BV/sub CEO/，又保证了实际IC应用所需的高速度。介绍了CCHBT的微波性能。作者在这些复合集电极晶体管的基础上制作并测试了单片跨阻放大器。得到28ghz的带宽和40db ω的增益。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting

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