2-D quantum transport device modeling by self-consistent solution of the Wigner and Poisson equations

Abstract

A new approach for simulating quantum transport in nanoscale semiconductor devices is presented. The method is based on the self-consistent solution of the Poisson and Wigner equations within a device. The spherical harmonic approach is used to transform the Wigner equation into a tractable expression. The results provide the distribution function and its averages throughout the device. The method has been applied to a MOSFET and a BJT. Inclusion of quantum effects reduces carrier concentrations near potential energy barriers, leading to reduced terminal current.