Epitaxy-on-electronics enhancement of GaAs IC performance with monolithic optical and quantum-effect devices

Abstract

An integration technique, epitaxy-on-electronics (EoE), is described wherein optoelectronic and quantum effect device heterostructures are grown on fully processed GaAs integrated circuit chips and subsequently processed into devices monolithically integrated with the pre-existing circuitry. Using this technique, one can realize the increased performance and functionality promised by adding advanced heterostructure quantum effect and optoelectronic devices to conventional integrated electronic circuitry, without developing a complete new VLSI technology. The details of the EoE technology are explained, and examples of optoelectronic integrated circuits incorporating LEDs, detectors, and MESFET electronics are presented. The OPTOCHIP Project, a prototype EoE research OEIC foundry, and work on EoE integration of resonant tunneling diodes to form one-transistor GaAs static random access memory cells, are also described.