To improve the measure fail rate On SEM through six sigma DMAIC methodology — Chien-Hui Lu

Ricky Lu, C. Chao, Yi Cheng
{"title":"To improve the measure fail rate On SEM through six sigma DMAIC methodology — Chien-Hui Lu","authors":"Ricky Lu, C. Chao, Yi Cheng","doi":"10.23919/ISSM.2017.8089095","DOIUrl":null,"url":null,"abstract":"A Critical Dimension SEM (CD-SEM: Critical Dimension Scanning Electron Microscope) is a dedicated system for measuring the dimensions of the fine patterns formed on a semiconductor wafer. CD-SEM is mainly used in the manufacturing lines of electronic devices of semiconductors. The measurement process includes OM Alignment, SEM Alignment, Addressing, Measurement, and Image Saved. From May 2015, we found CD-SEM measure fail rate (measured by S-9380 SEM) is too high (its point reject rate is 46.13%). High measure fail rate will reduce the equipment capacity utilization, and increase manufacturing costs. So, we apply six-sigma DMAIC methodology to improve CD SEM fail rate that is our primary task, this is big Y. According to entitlement rules, we make a target to improve CD SEM fail rate from 46.13% to 15.4%. Drilling down CD SEM fail ERR (Error code reject rate) and analyze the data, the most of measurement errors are in addressing code (9007) =43.731%. We choice addressing code (9007) improvement as our small y. To improve this problem, the Six Sigma approach of DMAIC (Define, Measure, Analyze, Improve, Control) is deployed on this project. There are several tools applied in this process improvement, such as SIPOC, Detailed Map, Cause & Effect Matrix analysis, ANOVA, and DOE. Initial investigation indicates several factors in addressing of Photo process contribute this measurement fail phenomenon. By Cause & Effect Matrix, several factors are clarified as most possible root causes, they are X1:Magnification, X2: Algorithm, X3: Kind, and X4: Method. After the statistical comparisons, X1: Magnification and X4: Method are significant & important factors. DOE is conducted to figure out the optimized process control conditions and the results showed significant difference from original conditions. With such implementation, the CE-SEM measurement fail rate is improved from 46.13% to 1%. The total benefits lead to 39 million cost saving! It is a good practice to proceed continuously the quality improvement with Six Sigma Methodology for other defect improvement in the future.","PeriodicalId":280728,"journal":{"name":"2017 Joint International Symposium on e-Manufacturing and Design Collaboration (eMDC) & Semiconductor Manufacturing (ISSM)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Joint International Symposium on e-Manufacturing and Design Collaboration (eMDC) & Semiconductor Manufacturing (ISSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISSM.2017.8089095","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

A Critical Dimension SEM (CD-SEM: Critical Dimension Scanning Electron Microscope) is a dedicated system for measuring the dimensions of the fine patterns formed on a semiconductor wafer. CD-SEM is mainly used in the manufacturing lines of electronic devices of semiconductors. The measurement process includes OM Alignment, SEM Alignment, Addressing, Measurement, and Image Saved. From May 2015, we found CD-SEM measure fail rate (measured by S-9380 SEM) is too high (its point reject rate is 46.13%). High measure fail rate will reduce the equipment capacity utilization, and increase manufacturing costs. So, we apply six-sigma DMAIC methodology to improve CD SEM fail rate that is our primary task, this is big Y. According to entitlement rules, we make a target to improve CD SEM fail rate from 46.13% to 15.4%. Drilling down CD SEM fail ERR (Error code reject rate) and analyze the data, the most of measurement errors are in addressing code (9007) =43.731%. We choice addressing code (9007) improvement as our small y. To improve this problem, the Six Sigma approach of DMAIC (Define, Measure, Analyze, Improve, Control) is deployed on this project. There are several tools applied in this process improvement, such as SIPOC, Detailed Map, Cause & Effect Matrix analysis, ANOVA, and DOE. Initial investigation indicates several factors in addressing of Photo process contribute this measurement fail phenomenon. By Cause & Effect Matrix, several factors are clarified as most possible root causes, they are X1:Magnification, X2: Algorithm, X3: Kind, and X4: Method. After the statistical comparisons, X1: Magnification and X4: Method are significant & important factors. DOE is conducted to figure out the optimized process control conditions and the results showed significant difference from original conditions. With such implementation, the CE-SEM measurement fail rate is improved from 46.13% to 1%. The total benefits lead to 39 million cost saving! It is a good practice to proceed continuously the quality improvement with Six Sigma Methodology for other defect improvement in the future.
运用六西格玛DMAIC方法提高SEM测量不良率-吕建辉
关键尺寸扫描电子显微镜(CD-SEM:关键尺寸扫描电子显微镜)是一种用于测量半导体晶圆上形成的精细图案尺寸的专用系统。CD-SEM主要用于半导体电子器件的生产线。测量过程包括OM对准、SEM对准、寻址、测量和图像保存。从2015年5月开始,我们发现CD-SEM测量不良率过高(S-9380 SEM测量),点不良率为46.13%。测量故障率高会降低设备的产能利用率,增加制造成本。因此,我们采用六西格玛DMAIC方法来提高CD SEM的失败率,这是我们的首要任务,这是大y。根据权利规则,我们制定了将CD SEM的失败率从46.13%提高到15.4%的目标。钻取CD SEM fail ERR (Error code reject rate)并分析数据,测量误差最多的是寻址码(9007)=43.731%。我们选择解决代码(9007)改进作为我们的小y。为了改进这个问题,DMAIC(定义、测量、分析、改进、控制)的六西格玛方法被部署在这个项目上。在此过程改进中使用了几种工具,如SIPOC、Detailed Map、因果矩阵分析、ANOVA和DOE。初步研究表明,在处理照相过程中,有几个因素导致了这种测量失败现象。通过因果矩阵,明确了几个因素作为最可能的根本原因,它们是X1:放大,X2:算法,X3:种类,X4:方法。经统计比较,X1:放大率和X4:方法是有意义的重要因素。通过DOE得到优化后的工艺控制条件,结果与初始条件有显著差异。通过这样的实现,CE-SEM测量失败率从46.13%提高到1%。总收益可节省3900万美元的成本!在今后的其他缺陷改进中,持续使用六西格玛方法进行质量改进是一种良好的实践。
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