Impact of Self-Heating on Performance, Power and Reliability in FinFET Technology

Abstract

Self-heating is one of the biggest threats to reliability in current and advanced CMOS technologies like FinFET and Nanowire, respectively. Encapsulating the channel with the gate dielectric improved electrostatics, but also thermally insulates the channel resulting in elevated channel temperatures as the generated heat is trapped within the channel. Elevated channel temperatures lowers the performance, increases leakage power and degrades the reliability of circuits. Self-heating becomes worse in each new transistor structure (from planar transistor to FinFET to Nanowire) due to the ever-increasing thermal resistance of the transistor. This leads to elevated temperatures, which must be carefully considered while designing circuits. Otherwise, reliability cannot be ensured. This work presents a self-heating study to illustrate how self-heating matters in digital circuits. It also explores the impact of running workloads in SRAM arrays, such as register files in CPUs, and how self-heating effects in SRAM cells can be mitigated.