Failure analysis on MIMCAP failures of 10nm devices using phase angle measurement method

Hsu Li khoo, L.L. Goh, Y. G., Kok Heng Lau, C. N. Liew, Siew Ming Lim
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引用次数: 1

Abstract

Failure analysis in scale down devices becoming very much intricate by following Moore’s law concept for current technology trend. Thus, this indirectly bring a very challenging task for failure analyst (FA) to identify the real defect in complex integrated circuit effectively (IC). Metal insulator- metal (MIM) capacitor has become popular choice for designers to select in the different signal devices as it is well known to stabilize a voltage reduction that ultimately leads to drastically improved product and transistor performance [1]. In this paper, we did come out an excellent technique to isolate MIMCAP defects effectively by characterizing comprehensive phase angle measurement that can be performed by using Enhance Lock in Thermal Emission (ELITE) machine. Through the established fault isolation (FI) methods carried out, we can isolate the defect accuracy and physical failure analyst (PFA) is able to reveal the real defects in shorten time and achieve higher success rate in findings. This is mainly because MIMCAP is a very thin parasitic layer about 50X thinner than next metal layer that sandwiched in between top metal layer 1 and top metal layer 0 which PFA might missed out during inspection by following conventional PFA approached to find out the defects.
基于相位角测量法的10nm器件MIMCAP失效分析
在当前的技术发展趋势下,遵循摩尔定律的概念,缩小器件的失效分析变得非常复杂。因此,这间接地给故障分析人员有效地识别复杂集成电路的真正缺陷带来了非常艰巨的任务。金属绝缘体-金属(MIM)电容器已成为设计人员在不同信号器件中选择的热门选择,因为众所周知,它可以稳定电压降低,最终导致产品和晶体管性能的大幅提高[1]。在本文中,我们确实提出了一种优秀的技术,通过表征综合相角测量,可以使用增强锁定热发射(ELITE)机器来有效地隔离MIMCAP缺陷。通过建立的故障隔离(FI)方法,我们可以准确地隔离缺陷,物理故障分析(PFA)能够在更短的时间内发现真正的缺陷,并获得更高的发现成功率。这主要是因为MIMCAP是一个非常薄的寄生层,大约比下一层金属层薄50倍,夹在顶层金属层1和顶层金属层0之间,PFA在检查过程中可能会遗漏这一点,如果采用传统的PFA方法来发现缺陷。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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