A stage-bypass SOI-CMOS switch for multi-mode multi-band applications

Abstract

A double-pole double-throw SOI CMOS switch is presented, which can be exploited to bypass a power stage in a radio transmitter with the aim of improving efficiency in applications requiring transmit power control. The switch is designed through transistors stacking. It is able to manage up to a 35 dBm input power with less than 0.35 dB insertion loss from 500 MHz through 3 GHz. A series-shunt topology allows a better than 40 dB isolation to be obtained in high-power mode. Wide bandwidth and high linearity make the switch suitable for multi-standard front end.