{"title":"85–110 GHz CMOS tunable nonreciprocal transmission line with 45 dB isolation for wideband transceivers","authors":"C. Yang, P. Gui","doi":"10.1109/RFIC.2017.7969073","DOIUrl":null,"url":null,"abstract":"The first CMOS nonreciprocal transmission line (TL) for wideband tunable full-duplex transceiver front ends, having over 45 dB isolation in a bandwidth of 1.5 GHz and tuning range of 85–110 GHz, is demonstrated. Offering tunable nonreciprocal propagation, this structure is based on a parametric time-varying TL modulated by a 10 GHz signal through distributed capacitive mixing. Two capacitive mixers together with a biasing network form a resonant type of wideband matching. Implemented in a chip area of 0.245 mm2 in 65 nm CMOS, this nonreciprocal TL achieves over 45 dB isolation throughout its entire bandwidth, a maximum 6.5 dB insertion loss (IL) and over 10 dB return loss.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2017.7969073","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The first CMOS nonreciprocal transmission line (TL) for wideband tunable full-duplex transceiver front ends, having over 45 dB isolation in a bandwidth of 1.5 GHz and tuning range of 85–110 GHz, is demonstrated. Offering tunable nonreciprocal propagation, this structure is based on a parametric time-varying TL modulated by a 10 GHz signal through distributed capacitive mixing. Two capacitive mixers together with a biasing network form a resonant type of wideband matching. Implemented in a chip area of 0.245 mm2 in 65 nm CMOS, this nonreciprocal TL achieves over 45 dB isolation throughout its entire bandwidth, a maximum 6.5 dB insertion loss (IL) and over 10 dB return loss.