{"title":"A 2 × 20-Gb/s, 1.2-pJ/bit, time-interleaved optical receiver in 40-nm CMOS","authors":"Shih-Hao Huang, Zheng-Hao Hong, Wei-Zen Chen","doi":"10.1109/ASSCC.2014.7008869","DOIUrl":null,"url":null,"abstract":"This paper describes a single-chip, 2 × 20-Gb/s time-interleaved integrating-type optical receiver. Combining with correlation-based timing recovery and 1:4 demultiplexer, it achieves a high energy efficiency of 1.2-pJ/bit. By incorporating the proposed alternating photodetector (ALPD) current-sensing scheme, the front-end receiver is 4-way time-interleaved to increase input sensitivity and relax operating speed of digital comparator. The optical receiver achieves an input sensitivity of 44 μApp at bit-error-rate of less than 10-12. Fabricated in a 40-nm bulk CMOS technology, the chip size is 0.46 mm2.","PeriodicalId":161031,"journal":{"name":"2014 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2014.7008869","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
This paper describes a single-chip, 2 × 20-Gb/s time-interleaved integrating-type optical receiver. Combining with correlation-based timing recovery and 1:4 demultiplexer, it achieves a high energy efficiency of 1.2-pJ/bit. By incorporating the proposed alternating photodetector (ALPD) current-sensing scheme, the front-end receiver is 4-way time-interleaved to increase input sensitivity and relax operating speed of digital comparator. The optical receiver achieves an input sensitivity of 44 μApp at bit-error-rate of less than 10-12. Fabricated in a 40-nm bulk CMOS technology, the chip size is 0.46 mm2.