A 23/3-dB dual-gain low-noise amplifier for 5-GHz-band wireless applications

Abstract

We have developed a wide-dynamic-range low-noise amplifier (LNA) based on InGaP/GaAs hetero bipolar transistors (HBTs) for 5-GHz-band wireless applications. With no external matching components, this dual-gain LNA (with a 20-dB gain attenuation function) has a very high performance; namely, a noise figure (NF) of 2.3 dB, a gain of 23 dB, an output 1-dB compression point(P/sub 1dB/) of 9.8 dBm, and a DC power consumption (P/sub dc/) of 28 mW at 3.0 V. Its figure of merit, defined as (gain/NF)/spl middot/(P/sub 1dB//Pd/sub dc/), is 3.3, which is the highest value in the C-band to date.