Stability Analysis of 6T CNTFET SRAM Cell for Single and Multiple CNTs

M. Elangovan, K. Gunavathi
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引用次数: 6

Abstract

Carbon Nano Tube Field Effect Transistor (CNTFET) is a best futuristic device for nano scale range VLSI design than MOSFETs. This is due to the favourable physical properties of CNTFET. In this paper we present the comparative Stability analysis of a CNTFET based six transistor Static Random Access Memory (6T SRAM) cell for single nano tube CNTFET and multiple nano tubes CNTFET. The SRAM cell stability is measured by Static Noise Margin (SNM) of the cell. The SNM of 6T SRAM is also analysed for different chiral vectors. The comparison shows that the single tube and low chiral vector values provides high stability of CNTFET 6T SRAM cell than multiple tubes with high chiral vector. The simulation is carried out with 32nm technology.
单根和多根cntet SRAM电池的稳定性分析
碳纳米管场效应晶体管(CNTFET)是纳米级超大规模集成电路设计中比mosfet更好的未来器件。这是由于CNTFET良好的物理性质。在本文中,我们提出了一种基于CNTFET的六晶体管静态随机存取存储器(6T SRAM)单元的稳定性比较分析,用于单纳米管CNTFET和多纳米管CNTFET。SRAM电池的稳定性通过电池的静态噪声裕度(SNM)来衡量。分析了不同手性矢量下6T SRAM的SNM。比较表明,单管低手性矢量值比多管高手性矢量值提供了更高的CNTFET 6T SRAM电池稳定性。仿真采用32nm工艺进行。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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