A Prediction for Allowable Maximum Turn-on Speed of SiC Power Module by A Correlation Between Turn-on Transient Waveforms

Abstract

Silicon Carbide (SiC) power module has the advantages in high-frequency and high-power applications due to the superior properties of fast switching and low loss under condition of high-current output. However, as the switching speed increases, the abnormal transient waveforms are developed, so that the fast switching performance is restricted eventually. In this paper, two kinds of SiC power modules are fabricated, and the variation trend in turn-on transient waveforms of SiC power modules with increasing turn-on speed is investigated. A correlation existing between the variation trends of drain-source voltage and gate-source voltage waveforms with rising turn-on speed is disclosed by experiments. A criterion for the allowable maximum turn-on speed of SiC power module is also proposed based on this correlation. The findings in this paper provide a new reference for enabling the fast-switching performance of SiC power module in high-current applications.