Modeling and simulation of Si/PEDOT:PSS planar heterojunction photovoltaics by finite element method

Abstract

Modeling and simulation of Si/PEDOT:PSS planar heterojunction solar cell is performed by using the finite element method to solve Poisson equation, drift-diffusion equations and current continuity equations. PEDOT:PSS is a hole-rich organic semiconductor, which can be treated as highly p-type doped semiconductor. While, the 2μm silicon thin film is n-type doped. The Si/PEDOT:PSS heterojunction behaves like a pn junction rather than a Schottky junction as clarified in previous study and the PEDOT : PSS is much highly doped, the hole diffusion current in Si is the dominant current component. The simulated J-V characteristics of the Si/PEDOT:PSS planar heterojunction are obtained and compared with experiments.