Future trends in nonvolatile memories

1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1987.1157075

P. Suciu

引用次数: 0

Abstract

Key areas to be assessed by the panelists are the merits of non-volatile memory techniques, tradeoffs between them and forecasts of trends in the next decade. Additionally, user and manufacturer panelists will probe the future of EPROMs, flash E2PROMs and E2PROMs.

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非易失性存储器的未来趋势

小组成员要评估的关键领域是非易失性存储器技术的优点，它们之间的权衡和未来十年趋势的预测。此外，用户和制造商小组成员将探讨eprom、闪存e2prom和e2prom的未来。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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