Novel 3D narrow mesa IGBT suppressing CIBL

Abstract

It was reported that the experimentally fabricated very narrow mesa IGBT has poor short-circuit withstand capability because of CIBL. We propose a novel narrow mesa IGBT, which suppresses CIBL. Additional deep P+ diffusion layer inside the P-base improves CIBL by reducing the enhanced conductivity modulation in the channel inversion layer. The structure achieves good short-circuit withstand capability and superior trade-off relationship between on-state voltage drop and turn-off loss.