InSb nanocrystals containing SOI structures: Preparation and properties

Abstract

The InSb nanocrystals embedded in buried SiO2 layer of a SOI structure were obtained by the In+ and Sb+ ion implantation into the SiO2 layers thermally grown on Si wafers followed by the hydrogen transfer of a Si film and high-temperature annealing. Transmission electron microscopy, Raman spectroscopy and photoluminescence (PL) were used to study the structure properties. The spherical shaped InSb nanocrystals bimodal size-distributed on the depth close to ion profiles were obtained. The TO-LO splitting was obtained in the Raman spectra from the InSb nanocrystals. The effect of both phonon quantum confinement and stresses on the phonon frequency shift was calculated. The obtained PL peak at the 1524 nm (0.81 eV) corresponds to the localized electron and hole energy in the InSb nanocrystals of about 13 nm size.