Process, voltage and temperature compensation of off-chip-driver circuits for sub-0.25-/spl mu/m CMOS technology

H. Chi, D. Stout, J. Chickanosky
{"title":"Process, voltage and temperature compensation of off-chip-driver circuits for sub-0.25-/spl mu/m CMOS technology","authors":"H. Chi, D. Stout, J. Chickanosky","doi":"10.1109/ASIC.1997.617021","DOIUrl":null,"url":null,"abstract":"A control circuit that compensates for variations in process, voltage and temperature (PVT) has been developed to control off-chip-driver circuits used for sub-0.25-/spl mu/m technology. The off-chip-driver (OCD), alone with a simple control scheme, delivers a tight impedance tolerance at the output, improving the output signal waveforms. Across-chip length variation (ACLV), the controlled-circuit design and off-chip-driver performance are also discussed.","PeriodicalId":300310,"journal":{"name":"Proceedings. Tenth Annual IEEE International ASIC Conference and Exhibit (Cat. No.97TH8334)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. Tenth Annual IEEE International ASIC Conference and Exhibit (Cat. No.97TH8334)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASIC.1997.617021","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

A control circuit that compensates for variations in process, voltage and temperature (PVT) has been developed to control off-chip-driver circuits used for sub-0.25-/spl mu/m technology. The off-chip-driver (OCD), alone with a simple control scheme, delivers a tight impedance tolerance at the output, improving the output signal waveforms. Across-chip length variation (ACLV), the controlled-circuit design and off-chip-driver performance are also discussed.
低于0.25-/spl μ m CMOS技术的片外驱动电路的工艺、电压和温度补偿
一种补偿过程、电压和温度(PVT)变化的控制电路已经开发出来,用于控制芯片外驱动电路,用于低于0.25-/spl mu/m的技术。片外驱动器(OCD)单独使用简单的控制方案,在输出端提供紧密的阻抗容限,改善输出信号波形。讨论了跨片长度变化(ACLV)、控制电路设计和片外驱动性能。
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