An empirical and analytical comparison of delay elements and a new delay element design

N.R. Mahapatra, S. V. Garimella, A. Tareen
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引用次数: 46

Abstract

This paper comprehensively reviews five different delay element architectures for use in CMOS VLSI design. The first four delay elements that we analyze are already in general use; they are the transmission gate, cascaded inverters, thyristor, and voltage-controlled delay element. The fifth delay element, a transmission gate with Schmitt trigger, is a new architecture that we are proposing in this paper. We compare these delay elements, both analytically and through simulations, in terms of four important parameters: delay, signal integrity, power consumption, and area, and find that they have widely varying characteristics. Depending upon the delay value required in an application, results presented in this paper will enable a designer to select the most appropriate delay element that meets signal integrity, power consumption, and area specifications.
延时元件的经验分析比较和一种新的延时元件设计
本文全面回顾了五种不同的延迟元件架构,用于CMOS VLSI设计。我们分析的前四种延迟元件已经被普遍使用;它们是传输门、级联逆变器、晶闸管和压控延迟元件。本文提出了一种新的延迟元件结构,即带施密特触发器的传输门。我们从四个重要参数:延迟、信号完整性、功耗和面积两方面对这些延迟元件进行了分析和仿真比较,发现它们具有广泛不同的特性。根据应用中所需的延迟值,本文提供的结果将使设计人员能够选择最合适的延迟元件,以满足信号完整性,功耗和面积规格。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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