Comparative study of two-valley models for space charge wave propagation in GaAs semiconductor films

V. Grimalsky, Abel García, E. Gutiérrez
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Abstract

A full comparative study of three models to describe the transport of carrier in GaAs is presented. These models were done by Tomizawa (1999), Shur (1993), and Rodrigues (1998), using the balance equations, where the two-valley model in which only the /spl gamma/-valley and the l-valley were taken into account. These models have been used to describe the space charge wave propagation in thin n-GaAs films. it has been demonstrated that sometimes the models of Shur and Rodrigues may lead to incorrect results. Essential peculiarities of the Tomizawa model has been put forward.
GaAs半导体薄膜中空间电荷波传播的双谷模型的比较研究
对描述砷化镓中载流子输运的三种模型进行了全面的比较研究。这些模型是由Tomizawa (1999), Shur(1993)和Rodrigues(1998)使用平衡方程完成的,其中双谷模型中只考虑了/spl γ /-谷和l-谷。这些模型被用来描述n-GaAs薄膜中空间电荷波的传播。事实证明,有时Shur和Rodrigues的模型可能会导致不正确的结果。富泽模型的本质特点已被提出。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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