Analytical analysis of the contact resistance (Rc) of metal-MoS2 interface

Abstract

Molybdenum disulfide (MoS2) is a new emerging 2D material like graphene for applications in solid state, optoelectronic and many other devices. MoS2 has good bandgap for electronic applications. Graphene has almost zero bandgap and that will lead to impractical switching operation for MOSFET. MoS2 based switching devices will not have this limitation. The 2D flat nature of MoS2 would be suitable for integration and scaling at nanoscale dimensions. Due to its unique electrical, thermal, optical, and mechanical stability, MoS2 is considered as the new super-material for post-silicon and very high frequency era. However, the MoS2-contact mismatch issues would lead to the reduction of MoS2 based device performance. In this work we have investigated the MoS2 contact resistance (which is one of the most critical parameters) in terms of band structure, Schottky barrier and other material properties. Several material such as W, Sn, Pt, Au, Sc and Cu are studied to determine the appropriate contact resistance with MoS2. In this analysis we have concluded that Tungsten (W) is the most suitable material that gives a low contact resistance for both p- and n-type MOSFETs with MoS2 channel.